2H-WS2 (2H Tungsten Disulfide)是一种半导体层状材料。层间相互作用为范德华（van der Waals）相互作用。它是间接带隙半导体，带隙大小约为1.3 eV。但是单层的WS2是直接带隙半导体。二硫化钨属于第六族过渡金属二卤化物（TMDC）。我们提供的2H-WS2直径8 -10 mm，是n型半导体，室温下载流子浓度约为1014 cm-3量级。
2H-WS2 crystal properties
| Crystal size | ~10 mm |
| Electrical properties | Semiconductor, n-type, undoped |
| Crystal structure | hexagonal |
| Unit cell parameters | a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120° |
| Monolayer properties |  Link to C2DB containing calculated properties |
| Type | Synthetic |
| Purity | >99.995 % |
| Characterized by | XRD, Raman, EDX, Hall measurement |
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